Self-electroforming and high-performance complementary memristor based on ferroelectric tunnel junctions

Ferroelectric tunnel memristor.

Strong interest in resistive switching phenomena is driven by a possibility to develop electronic devices with novel functional properties not available in conventional systems. Bistable resistive devices are characterized by two resistance states that can be switched by an external voltage. Recently, memristors-electric circuit elements with continuously tunable resistive behavior-have emerged...

Programmable ferroelectric tunnel memristor

*Correspondence: Marin Alexe, Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany e-mail: [email protected] We report a programmable analog memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr0.2Ti0.8)O3 film sandwiched betwe...

Functional ferroelectric tunnel junctions on silicon

The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawbacks, such as low operation speed, and limited cycle endurance, which prevents it from becoming the ...

Ferroelectric tunnel junctions with graphene electrodes.

Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)--structures composed of two electrodes separated by an ultrathin ferroelectric barrier--offers new physics and materials functionalities, as well as exciting opportunities for the next generation of non-volatile memories and logic devices. Performance of FTJs is highly sensitive to the electrical boundary condition...

Giant Electroresistance in Ferroelectric Tunnel Junctions